Basic Info.
Model NO.
OST40N120HMF TO-247N
Material
Compound Semiconductor
Model
Orientalsemi
Package
DIP(Dual In-line Package)
Signal Processing
Simulation
Type
N-Type Semiconductor
Brand
Orientalsemi
Transport Package
Carton
Specification
35.3x30x37.5/60x23x13
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month
Product Description
General Description
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features
Applications
Key Performance Parameters
Marking Information
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features
- Advanced TGBTTM technology
- Excellent conduction and switching loss
- Excellent stability and uniformity
- Fast and soft antiparallel diode
Applications
- Induction converters
- Uninterruptible power supplies
Key Performance Parameters
| Parameter | Value | Unit |
| VCES, min @ 25°C | 1200 | V |
| Maximum junction temperature | 175 | °C |
| IC, pulse | 160 | A |
| VCE(sat), typ @ VGE=15V | 1.45 | V |
| Qg | 214 | nC |
Marking Information
| Product Name | Package | Marking |
| OST40N120HMF | TO247 | OST40N120HM |
Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Collector emitter voltage | VCES | 1200 | V |
| Gate emitter voltage | VGES | ±20 | V |
| Transient gate emitter voltage, TP≤0.5µs, D<0.001 | ±25 | V | |
| Continuous collector current1), TC=25ºC | IC | 56 | A |
| Continuous collector current1), TC=100ºC | 40 | A | |
| Pulsed collector current2), TC=25ºC | IC, pulse | 160 | A |
| Diode forward current1), TC=25ºC | IF | 56 | A |
| Diode forward current1), TC=100ºC | 40 | A | |
| Diode pulsed current2), TC=25ºC | IF, pulse | 160 | A |
| Power dissipation3), TC=25ºC | PD | 357 | W |
| Power dissipation3), TC=100ºC | 179 | W | |
| Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
| Short circuit withstand time VGE=15 V, VCC≤600 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj=150 °C | tSC | 10 | μs |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| IGBT thermal resistance, junction-case | RθJC | 0.42 | °C/W |
| Diode thermal resistance, junction-case | RθJC | 0.75 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Electrical Characteristics at Tvj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V | VGE=0 V, IC=0.5 mA | ||
Collector-emitter saturation voltage | VCE(sat) | 1.45 | 1.8 | V | VGE=15 V, IC=40 A Tvj=25°C | |
| 1.65 | V | VGE=15 V, IC=40 A, Tvj =125°C | ||||
| 1.8 | VGE=15 V, IC=40 A, Tvj =175°C | |||||
| Gate-emitter threshold voltage | VGE(th) | 4.8 | 5.8 | 6.8 | V | VCE=VGE, ID=0.5 mA |
Diode forward voltage | VF | 1.9 | 2.1 | V | VGE=0 V, IF=40 A Tvj =25°C | |
| 1.6 | VGE=0 V, IF=40 A, Tvj =125°C | |||||
| 1.5 | VGE=0 V, IF=40 A, Tvj =175°C | |||||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0 V, VGE=20 V | ||
| Zero gate voltage collector current | ICES | 10 | μA | VCE=1200V, VGE=0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Cies | 11270 | pF | VGE=0 V, VCE=25 V, ƒ=100 kHz | ||
| Output capacitance | Coes | 242 | pF | |||
| Reverse transfer capacitance | Cres | 10 | pF | |||
| Turn-on delay time | td(on) | 120 | ns | VGE=15 V, VCC=600 V, RG=10 Ω, IC=40 A | ||
| Rise time | tr | 88 | ns | |||
| Turn-off delay time | td(off) | 246 | ns | |||
| Fall time | tf | 160 | ns | |||
| Turn-on energy | Eon | 3.14 | mJ | |||
| Turn-off energy | Eoff | 1.02 | mJ | |||
| Turn-on delay time | td(on) | 112 | ns | VGE=15 V, VCC=600 V, RG=10 Ω, IC=20 A | ||
| Rise time | tr | 51 | ns | |||
| Turn-off delay time | td(off) | 284 | ns | |||
| Fall time | tf | 148 | ns | |||
| Turn-on energy | Eon | 1.32 | mJ | |||
| Turn-off energy | Eoff | 0.53 | mJ |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 214 | nC | VGE=15 V, VCC=960 V, IC=40 A | ||
| Gate-emitter charge | Qge | 103 | nC | |||
| Gate-collector charge | Qgc | 40 | nC |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode reverse recovery time | trr | 293 | ns | VR=600 V, IF=40 A, diF/dt=500 A/μs Tvj = 25°C | ||
| Diode reverse recovery charge | Qrr | 2.7 | μC | |||
| Diode peak reverse recovery current | Irrm | 25 | A |
Note
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
Version 1: TO247-P package outline dimension
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO247-P | 30 | 11 | 330 | 6 | 1980 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OST40N120HMF | TO247 | yes | yes | yes |
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Green Product Declaration
